IRFZ44N Power MOSFET TO-220 IC

SKU: RW-IC0089
Transistor Type N-Channel MOSFET
Drain-Source Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Pulsed Drain Current (Id, Pulse) 160A
Gate-Source Voltage (Vgs) ±20V
Threshold Voltage (Vgs(th)) 2.0V to 4.0V

19.00 ( Excluding 18% GST )

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Overview of this IRFZ44N Power MOSFET TO-220 IC

Introducing Roboway IRFZ44N Power MOSFET TO-220 IC at best price in India. A robust and efficient component for power management application. This IRFZ44N IC is design to handle high current and voltage with easily. Its TO-220 package ensure excellent heat dissipation & enhance its reliability. Optimize your power electronic project with the MOSFET TO-220 IRFZ44N IC.

This IRFZ44N Power MOSFET TO-220 IC is ideal for various application include switching and amplification. This Power MOSFET TO-220 IC offer low on resistance and fast switching speed. Its compact design allow for easy integration into your circuit.

This MOSFET TO-220 IRFZ44N IC for superior power handle and efficiency. This IC provide stable and efficient performance in harsh condition. Its high current capability make it perfect for both professional and DIY project.

Features

  • High current handling: This IRFZ44N ic supports up to 49A of continuous drain current for powerful application. And make it perfect for high power circuit and system.
  • Low on-resistance: It also features a low Rds(on) value of 0.0175 ohms for efficient operation. And minimizes power loss and heat generation during use.
  • Fast switching speed: This Power MOSFET TO-220 IC also provide rapid switching capabilities for high frequency application. And enhance performance in fast switching circuit.
  • Robust voltage rating: This MOSFET TO-220 IRFZ44N ic can work in a maximum drain-source voltage of 55V. Ensures reliable operation in various voltage conditions.
  • TO-220 package: This MOSFET TO-220 IRFZ44N ic also come in a TO-220 package for easy mounting and heat dissipation. Ideal for use with heatsinks in high power environment.

Specification

Specification Description
Transistor Type N-Channel MOSFET
Drain-Source Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Pulsed Drain Current (Id, Pulse) 160A
Gate-Source Voltage (Vgs) ±20V
Threshold Voltage (Vgs(th)) 2.0V to 4.0V
Rds(on) 17.5mΩ (at Vgs = 10V, Id = 25A)
Power Dissipation (Pd) 94W
Maximum Operating Temperature 175°C
Total Gate Charge (Qg) 67nC
Input Capacitance (Ciss) 1350pF
Package Type TO-220
Gate Resistance (Rg) 1.7Ω (typical)
Rise Time (tr) 60ns (typical)
Fall Time (tf) 45ns (typical)
Mounting Type Through Hole
SKU RW-IC0089

 

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